features high reliability small surface mounting type applications computer and industrial applications construction silicon epitaxial planar absolute maximum ratings (t j =25 ) parameter repetitive peak reverse voltage reverse vltage peak forward surge current repetitive peak forward current forward current average forward current power dissipation junction temperature storge temperature range maximum thermal resistance (t j =25 ) parameter junction ambient electrical characteristics t j =25 parameter symbol min typ max unit v f 0.54 0.62 v v f 0.66 0.74 v v f 0.76 0.86 v v f 0.82 0.92 v v f 0.87 1.0 v i r 100 na i r 100 ua diode capacitance c d 2.5 pf reverse recovery time trr 4 ns ~ 427 ~ 1N4151 v rrm 100 v symbol value high-speed switching diode p v i frm dimensions in inches and (millimeters) type i fav 53 v r 75 i f mw 75 ma ma 300 500 k/w on pc board 50mm*50mm*1.6mm test conditions rth ja symbol value unit high speed switch and general purpose use in tp=1us v r =0 reverse current t j unit forward voltage i f =10ma i f =50ma i f =100ma i f =200ma ts t g -65 ~ +175 v r =0, f=1mhz, v hf =50ma i f = i r =10 100ma,r l =100 test conditions i f =1ma v r =50v v r =50v, tj=150 test conditions v i fsm 75 a do - 35 .020 (0.51) typ. 1.083(27.5) min .150(3.8) max .079 (2.0) max 1.083(27.5) min
rating and characteristic curves ~ 428 ~ 1N4151 fig.3-reverse current vs. junction temperature i r ( u a ) t j (( c) 0.1 1 0.01 10 0 100 200 100 1000 v r =75v typical values v r =20v typical values v r (v) fig. 4 -diode capacitance vs. reverse voltage (typical values) cd (pf) 0.8 0.6 0.4 0 10 20 1.0 1.2 f=1m hz ,t j =25 c tamb( c) fig. 1 - maximum permissible continuous forward current vs. ambient temperature i f (m a) 0 100 200 400 100 0 200 300 v f (v) fig. 2 -forward current vs.forward voltage i f (m a) 400 200 0 0 1 2 600 t j =175 c typical values t j =25 c typical values
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